Experimental results on fast surface states and 1/ f noise in m.o.s. transistors
- 6 March 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (5) , 97-98
- https://doi.org/10.1049/el:19750074
Abstract
Experimental results for 1/f noise in m.o.s. transistors with very low surface state densities are presented. A direct relation between noise and surface state density is found, extending previously published data.Keywords
This publication has 1 reference indexed in Scilit:
- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968