SEM observation and contrast mechanism of stacking faults in an epitaxial silicon layer
- 1 September 1974
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9) , 3732-3737
- https://doi.org/10.1063/1.1663852
Abstract
The stacking-fault tetrahedron in an epitaxial Si layer was observed in the electron-beam-induced current mode using the scanning electron microscope. The contrast mechanism involved in the stair-rod partial dislocations of the stacking-fault tetrahedron was analyzed on the basis of a simplified model. The calculation seems to fit the experiment since good agreement was obtained between the observed and calculated results.This publication has 11 references indexed in Scilit:
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