Band-to-band auger recombination and carrier-carrier scattering in power rectifiers

16 November 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (23) , 580-582
https://doi.org/10.1049/el:19720421

Abstract

It is shown that band-to-band Auger recombination has a profound influence on the carrier-concentration profile and on the forward characteristic of p-s-n rectifiers (and thyristors) at high current densities, particularly when the diffusivity is decreased at high carrier concentrations by carrier-carrier scattering.

Keywords

THYRISTORS
ELECTRON HOLE RECOMBINATION
SOLID STATE RECTIFIERS
CARRIER DENSITY
CARRIER CONCENTRATION PROFILE
FORWARD CHARACTERISTIC
POWER RECTIFIERS
AUGER EFFECT

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