Closed-loop control of growth of semiconductor materials and structures by spectroellipsometry

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Abstract
Using closed-loop ellipsometric feedback control, we have grown a variety of epitaxial AlxGa1−xAs structures by chemical beam epitaxy where compositions x vary continuously with thickness according to a given input function. Present limits are exemplified by a 200 Å parabolic quantum well structure grown using compositions determined from the outermost running ∼3 Å (∼1 monolayer) of depositing material.

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