Radiation effects of focused ion beam microfabrication on Ni disilicide thin films by in situ transmission electron microscopy
- 12 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (7) , 961-963
- https://doi.org/10.1063/1.116112
Abstract
Structural changes of epitaxial Ni disilicide thin films on Si(111) were investigated with an in situ transmission electron microscope (TEM) incorporated with a focused ion beam (FIB). Epitaxial growth of NiSi2 on a Si(111) TEM specimen was achieved by the combination of Ni deposition and subsequent annealing. Three different sized squares were microfabricated by 25 keV Ga+‐FIB onto this specimen during TEM observation at room temperature. FIB lithography caused the exfoliation of Ni silicide film along the microfabricated lines and the defects adjacent to the beam incident area. The beam affected area outside of the microfabricated line was about 2–3 μm.Keywords
This publication has 0 references indexed in Scilit: