A fully planar heterojunction bipolar transistor

1 November 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (11) , 615-617
https://doi.org/10.1109/edl.1986.26493

Abstract

A fully planar heterojunction bipolar transistor (HBT) in the normal emitter-up configuration is reported. The process utilizes a two-step epitaxial deposition with an intervening selective ion implant of bases. A process is described, the aluminum lift-off (ALL) process, with which refractory metal contacts have been used. Large test devices fabricated have dc gains of β = 600.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
ALUMINUM
RESISTS
IMPLANTS
FABRICATION
MOCVD
ION IMPLANTATION
SPUTTER ETCHING
INVERTERS
GALLIUM ARSENIDE

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