Optically detected magnetic resonance in hydrogen effused a-Si:H : Role of dangling bond centres in the low energy luminescence
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 357-360
- https://doi.org/10.1016/0022-3093(83)90594-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Recombination in: Defect luminescencePhysical Review B, 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980