Phase formation in Cu-Si and Cu-Ge

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Abstract
Phase formation and growth kinetics have been investigated with lateral diffusion couples in Cu‐Si and Cu‐Ge systems. Analytical electron microscopy was used to determine the crystal structures and chemical compositions of the growing phases. Cu3Si is found to be the dominant phase in the Cu‐Si system. The growth of the silicide follows a (time)1/2 dependence with an activation energy of 0.95 eV in the temperature range of 200–260 °C. Cu3Ge is the only phase observed in Cu‐Ge lateral diffusion couples with its length up to 20 μm. The growth of Cu3Ge is a diffusion controlled process at a rate similar to that of Cu3Si. The activation energy of Cu3Ge growth is 0.94 eV at 200–420 °C. In Cu‐silicide or Cu‐germanide formation, Cu appears to be the dominant diffusing species.