Current work at the Stuttgart UHV diffusion bonding facility
- 1 May 2002
- journal article
- Published by Walter de Gruyter GmbH in Zeitschrift für Metallkunde
- Vol. 93 (5) , 432-437
- https://doi.org/10.3139/146.020432
Abstract
No abstract availableThis publication has 44 references indexed in Scilit:
- The growth and structure of epitaxial niobium on sapphireThin Solid Films, 2001
- Symmetrical tilt grain boundaries in body-centred cubic transition metals: Anab initiolocal-density-functional studyPhilosophical Magazine A, 2000
- Reliability of atom column positions in a ternary system determined by quantitative high‐resolution transmission electron microscopyJournal of Microscopy, 1998
- Atomic structure of epitaxial Nb-Al2O3interfaces II. Misfit dislocationsPhilosophical Magazine A, 1997
- Atomic structure of epitaxial Nb-Al2O3interfaces I. Coherent regionsPhilosophical Magazine A, 1997
- Microstructure and strength of Al-sapphire interface by means of the surface activated bonding methodJournal of Materials Research, 1997
- The atomistic structure of a Σ = 3, (111) grain boundary in NiAl, studied by quantitative high-resolution transmission electron microscopyPhilosophical Magazine A, 1996
- Structure and Chemistry of Grain Boundaries in Ytrria Doped AluminasMaterials Science Forum, 1996
- Influence of interface impurities on the fracture energy of UHV bonded niobium-sapphire bicrystalsActa Metallurgica et Materialia, 1992
- Ultra high vacuum diffusion bonded NbAl2O3 and CuAl2O3 joints—The role of welding temperature and sputter cleaningActa Metallurgica et Materialia, 1992