High-performance 1.6/spl mu/m single-epitaxy top-emitting VCSEL
- 1 January 2000
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 676-677
- https://doi.org/10.1109/cleo.2000.907500
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSELIEEE Journal of Selected Topics in Quantum Electronics, 1999
- Uniform threshold current, continuous-wave, singlemode1300 nm vertical cavity lasers from 0 to 70°CElectronics Letters, 1998
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995