4 Gbit/in.2 inductive write heads using high moment FeAlN poles
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 5880-5882
- https://doi.org/10.1063/1.362160
Abstract
Thin film inductive write heads incorporating 2‐μm‐thick single and multilayer FeAlN/SiO2 poles were fabricated. The poles were trimmed to 1 μm trackwidth using focused ion beam etching from the air bearing surface of the sliders. Tests on 2950 Oe media show satisfactory media saturation. Overwrite in excess of −43 dB and hard transition peak shift 2This publication has 12 references indexed in Scilit:
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