Control of intrinsic defects in molecular beam epitaxy grown CuInSe2
- 31 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 1061-1064
- https://doi.org/10.1016/s0022-0248(98)01519-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxyApplied Physics Letters, 1996
- Heteroepitaxy and characterization of CuInSe2 on GaAs(001)Journal of Crystal Growth, 1995
- Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performanceApplied Physics Letters, 1989