Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon
- 31 January 1996
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 97 (2) , 137-142
- https://doi.org/10.1016/0038-1098(95)00614-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Photoluminescence of excitons bound to the isoelectronic hydrogen-related defectsB80(1.1470 eV) andB191(1.1431 eV) in siliconPhysical Review B, 1995
- Photoluminescence of excitons bound to the isoelectronic hydrogen-related defectsB711(1.1377 eV) in siliconPhysical Review B, 1994
- Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stressPhysical Review B, 1992
- Electronic properties of hydrogen-related complexes in pure semiconductorsPhysica B: Condensed Matter, 1991
- Photoluminescence characterization of deep defects in siliconPhysica B+C, 1983