Explanation of the laser-induced oscillatory phenomenon in amorphous semiconductor films
- 1 October 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 48 (4) , 311-321
- https://doi.org/10.1080/13642818308246484
Abstract
A new model is presented which explains the recently observed oscillatory phenomena in self-supporting a-GeSe2 films. The model is based on a combination of thermal and photoinduced effects. It can also be used for predicting the experimental conditions for observing light-induced bistability and oscillatory phenomena in other amorphous semiconductor films.Keywords
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