Effect of Pressure on the Raman Shift in Ge
- 1 September 1978
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 45 (3) , 1061-1062
- https://doi.org/10.1143/jpsj.45.1061
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Raman scattering and phonon dispersion in Si and GaP at very high pressurePhysical Review B, 1975
- Calibration of the pressure dependence of the R1 ruby fluorescence line to 195 kbarJournal of Applied Physics, 1975
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Raman Scattering by Silicon and GermaniumPhysical Review B, 1967
- The thermodynamic and optical properties of germanium, silicon, diamond and gallium arsenideProceedings of the Physical Society, 1966
- Shift of [111] Phonon Energies at the Brillouin Zone Boundary Under Uniaxial Stress in GermaniumPhysical Review Letters, 1964
- The crystal structures of new forms of silicon and germaniumActa Crystallographica, 1964
- A calculation of the thermal expansion of germaniumPhilosophical Magazine, 1964
- Crystal Structures at High Pressures of Metallic Modifications of Silicon and GermaniumScience, 1963
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962