Nitrogen doping during atomic layer epitaxial growth of ZnSe
- 25 December 1995
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (26) , 3927-3929
- https://doi.org/10.1063/1.114407
Abstract
This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf‐plasma source. The ALE‐grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance–voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE‐grown layer has been obtained as high as 1.2×1018 cm−3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed.Keywords
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