Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy

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Abstract
We have systematically studied the electrical properties of heavily Si-doped GaAs grown on the (311)A GaAs surfaces by molecular beam epitaxy. It is found that the conduction type drastically changes from p type to n type with decreasing growth temperature at a critical temperature of ∼430 °C for uniform doping and ∼480 °C for the δ-doping case, with the transition temperature width as narrow as ∼50 °C for both cases. The highest hole density obtained for uniformly doped layers was 1.5×1020 cm−3, while for δ-doped layers a sheet hole density as high as 2.6×1013 cm−2 was achieved, which is the highest sheet hole density ever reported for δ-doped p-type GaAs.