Low-noise voltage-sensitive preamplifier operated in the Kelvin range for cryogenic detectors
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (1) , 471-476
- https://doi.org/10.1109/23.34485
Abstract
Low-l/f-noise GaAs MESFETs (metal-semiconductor field-effect transistors) were used to develop a preamplifier for cryogenic detectors. It operates at 1 K, has a voltage gain of 50, a bandwidth of 8 MHz and a noise level of 1.3 nV/√Hz at 100 kHz. It is used to amplify the signal of bolometric detectors, avoiding microphonics and RFI (radio-frequency interference) energy pick-up which heats the detector. It can also be used for risetime studies on fast detectorsKeywords
This publication has 9 references indexed in Scilit:
- Heat Capacity of P-Doped Si Thermistors at Low and Very Low Temperature Measured by Alpha-Particles and X-RaysEurophysics Letters, 1988
- Construction and performance of fast thermal detectors of alpha particles and X-raysNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Construction of a massive germanium thermal detector for experiments of rare decaysPhysics Letters B, 1988
- Thermal detection of particles using bolometric devicesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Considerations on Front End Electronics for Bolometric Detectors with Resistive ReadoutPublished by Springer Nature ,1987
- Electrical self-calibration of nonideal bolometersApplied Optics, 1984
- Thermal detectors as x-ray spectrometersJournal of Applied Physics, 1984
- Semiconductor devices suitable for use in cryogenic environmentsCryogenics, 1974
- The General Theory of Bolometer PerformanceJournal of the Optical Society of America, 1953