Low threshold ion-implanted Nd:YAG channel waveguide laser
- 5 December 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (25) , 2375-2376
- https://doi.org/10.1049/el:19911470
Abstract
The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500 μW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.Keywords
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