Étude de l'épitaxie localisée du GaAs
- 1 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 325-330
- https://doi.org/10.1016/0022-0248(72)90178-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAsJapanese Journal of Applied Physics, 1970
- Effects of Vapor Composition on the Growth Rates of Faceted Gallium Arsenide Hole DepositsJournal of the Electrochemical Society, 1968
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968
- Selective Epitaxial Deposition of Gallium Arsenide in HolesJournal of the Electrochemical Society, 1966