Comparison of threshold modulation in narrow MOSFETs with different isolation structures
- 30 June 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (6) , 551-554
- https://doi.org/10.1016/0038-1101(85)90124-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Subthreshold current in oxide isolated structuresIEEE Electron Device Letters, 1983
- Three-dimensional simulation of inverse narrow-channel effectElectronics Letters, 1982
- Influence of the channel width on the threshold voltage modulation in m.o.s.f.e.t.sElectronics Letters, 1975