Three-Photon Absorption in Semiconductors
- 15 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 5 (2) , 449-458
- https://doi.org/10.1103/physrevb.5.449
Abstract
The three-photon-transition absorption process is theoretically considered for different types of the energy-band model. It is shown that the present result reduces to the previous existing result for the case of the two-band model. It is also shown that if the effective mass of the electrons and the holes is anisotropic, the absorption process is dependent, in a very complicated way, on the polarization of the incident light.Keywords
This publication has 11 references indexed in Scilit:
- Two-photon absorption at a band edge with spheroidal energy surfaceOptics Communications, 1971
- Infrared Absorption in-Type GaPPhysical Review B, 1971
- Four-Photon Transition in SemiconductorsPhysical Review B, 1971
- Symmetry Assignments of Two-Photon Transitions in TlClPhysica Status Solidi (b), 1970
- Photoconductivity Studies of Two-Photon Magnetoabsorption in InSb and PbTePhysical Review B, 1969
- Theory of Multiphoton Magnetoabsorption in SemiconductorsPhysical Review B, 1968
- Theory of Two-Photon Spectroscopy in SolidsPhysical Review B, 1968
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Optical Effects of Energy Terms Linear in Wave VectorPhysical Review B, 1964
- Hall Effect in FerromagneticsPhysical Review B, 1954