Quantum Confinement Effects on the Dielectric Constant of Porous Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Correlation of Raman and photoluminescence spectra of porous siliconApplied Physics Letters, 1992
- Raman and Optical Characterization of Porous SiliconMRS Proceedings, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Ground impurity level in GaAs-AlGaAs superlatticesSurface Science, 1986
- Longitudinal dielectric constant for quantum wellsSuperlattices and Microstructures, 1985
- General model of the transverse dielectric constant of GaAs-AlAs superlatticesSuperlattices and Microstructures, 1985
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981
- Microstructural Information From Optical Properties In Semiconductor TechnologyPublished by SPIE-Intl Soc Optical Eng ,1981
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962