Carbon Nanotube Schottky Diodes Using Ti−Schottky and Pt−Ohmic Contacts for High Frequency Applications
- 27 May 2005
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 5 (7) , 1469-1474
- https://doi.org/10.1021/nl050829h
Abstract
We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than −15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W/√Hz.Keywords
This publication has 23 references indexed in Scilit:
- AC performance of nanoelectronics: towards a ballistic THz nanotube transistorSolid-State Electronics, 2004
- Extraordinary Mobility in Semiconducting Carbon NanotubesNano Letters, 2003
- Terahertz technologyIEEE Transactions on Microwave Theory and Techniques, 2002
- Carbon NanotubesPublished by Springer Nature ,2001
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- Room-temperature transistor based on a single carbon nanotubeNature, 1998
- Atomic structure and electronic properties of single-walled carbon nanotubesNature, 1998
- New one-dimensional conductors: Graphitic microtubulesPhysical Review Letters, 1992
- Are fullerene tubules metallic?Physical Review Letters, 1992
- Helical microtubules of graphitic carbonNature, 1991