Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing
- 5 August 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (6) , 821-823
- https://doi.org/10.1063/1.117903
Abstract
Photothermal radiometric measurements were performed on phosphorus implanted and annealed silicon wafers. Data were collected over modulation frequencies ranging between 0.1 and 100 kHz with the 488 nm Ar ion laser line as the excitation source. The sensitivity of this technique on implantation dose and annealing temperature is discussed. A semiquantitative analysis of the data is also carried out.Keywords
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