Iodine ion milling of indium-containing compound semiconductors
- 1 January 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 142-144
- https://doi.org/10.1063/1.94582
Abstract
The effects of reactive I+ ion beams, derived from a source of solid elemental I, on In-containing compound semiconductors have been investigated using transmission electron microscopy. The results are compared with the effects produced by beams of Ar+ and Xe+ inert gas ions. It is shown that the surface accumulation of metallic In due to the disproportionation normally associated with ion milling of these materials can be eliminated by the use of I+ ion beams. Transmission electron microscope specimens in cross-sectional configuration are used to demonstrate the excellent results which may be obtained by I+ ion milling of InP and InSb.Keywords
This publication has 4 references indexed in Scilit:
- Surface composition and etching of III-V semiconductors in Cl2 ion beamsApplied Physics Letters, 1982
- Hydrogen plasma etching of semiconductors and their oxidesJournal of Vacuum Science and Technology, 1982
- A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InPThin Solid Films, 1979
- The interaction of chlorine with indium phosphide surfacesJournal of Physics C: Solid State Physics, 1978