Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures
- 21 October 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (17) , 2543-2545
- https://doi.org/10.1063/1.117733
Abstract
Despite many separate studies of the two dominant defects, i.e., As precipitates and arsenic‐antisite (AsGa)‐related traps, in GaAs epilayers grown by molecular beam epitaxy at low temperatures, they are seldom examined simultaneously. In this letter, we report the detection of both defects in electron trap spectrum obtained by zero quiescent bias voltage transient current spectroscopy. The As precipitates appear as a broad continuum of states in the lower temperature region (Ga‐related defect appears as a discrete peak at a higher temperature. The AsGa‐related trap has an activation energy of 0.65 eV and a capture cross section of 9.3×10−14 cm2. It is found that the trap characteristic of low temperature GaAs is strongly dependent on its growth temperature and the above mentioned defects may not dominate in some cases.Keywords
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