High-brightness green light-emitting diodes
- 7 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (14) , 1178-1180
- https://doi.org/10.1049/el:19940766
Abstract
II-VI heterostructures composed of ZnSe/ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508–514 nm). The brightest devices produce 792 µW (10 mA, 4 V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.Keywords
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