Light soaking behavior of a-Si:H p-i-n solar cells

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Abstract
We have studied the effects of light soaking on p‐i‐n a‐Si:H solar cells. We find that degradation is much greater when light soaking and cell measurements are both done through the n‐layer rather than through the p‐layer. A slight increase in the short‐circuit current was observed whenever a sample soaked with blue or white light through the p‐layer was also measured through the p‐layer. The relative increase of the short‐circuit current is greater with larger i‐layer thicknesses.

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