Transient Analysis of MOS Transistors
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 636-643
- https://doi.org/10.1109/jssc.1980.1051448
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- An accurate two-dimensional numerical analysis of the MOS transistorSolid-State Electronics, 1972
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969
- The equivalent circuit of an arbitrarily doped field-effect transistorSolid-State Electronics, 1965
- Small-signal, high-frequency theory of field-effect transistorsIEEE Transactions on Electron Devices, 1964