Appearance of vertical dihydrides on a silicon surface while dissolving the surface oxide layer in hot water

Publisher Website
Google Scholar
Abstract
Removal of surface oxides from a partially oxidized Si(111) surface, and simultaneous termination of the new dangling bonds by hydrogen in hot water with a 0.004 ppm concentration of dissolved oxygen, was observed. During removal for up to 60 min, vertical dihydrides at step edges appeared on the hydrogen-terminated surface. From observing selective removal of vertical dihydrides from an oxygen-free hydrogen-terminated surface, the appearance of vertical dihydrides at step edges shows the existence of the dihydride creation reaction, while the oxides are dissolved in water.

This publication has 0 references indexed in Scilit: