Theory of H(I) Centers in Vitreous Silicon Dioxide
- 1 May 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 147 (1) , 261-266
- https://doi.org/10.1002/pssb.2221470130
Abstract
Electronic structure, optical, and ESR properties of a hydrogen atom bound in an oxygen vacancy in vitreous silicon dioxide are investigated by means of a semiempirical LCAO MO method (MINDO/3) in a molecular cluster approach. Three charge states of the defect are considered. The properties of the neutral defect prove to be in good agreement with experimental data on H(I) centers in silica glass.Keywords
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