The gate currents of junction field-effect transistors at low temperatures
- 1 June 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (6) , 1225-1226
- https://doi.org/10.1109/PROC.1969.7213
Abstract
The gate currents of Ge and Si junction FET's operating beyond pinch-off show a component which increases as the temperature decreases and increases rapidly with drain voltage. A model is presented which explains these currents in terms of impact ionization by majority charge carriers, accelerated to energies above 1 eV in the high field region of the pinched-off channel. The probability of carriers reaching these energies is thought to be determined by their interactions with the lattice and thus is a function of lattice temperature, carrier type, and semiconductor material.Keywords
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