Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5A) , L560-563
- https://doi.org/10.1143/jjap.31.l560
Abstract
A novel process for visible light emission from Si has been successfully developed. The sample was irradiated with argon or chlorine ions in an ECR (electron cyclotron resonance) etching apparatus. After etching, the sample was placed in HF solution for 30 minutes. Visible light emission from the sample has been confirmed at a peak wavelength of 700 nm. Various characterizations have been performed, such as SEM and TEM observations, X-ray diffraction and FTIR spectroscopy. Anodized porous silicon is also characterized for comparison.Keywords
This publication has 8 references indexed in Scilit:
- FTIR studies of H2O and D2O decomposition on porous silicon surfacesPublished by Elsevier ,2002
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Efficient Visible Photoluminescence from Porous SiliconJapanese Journal of Applied Physics, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy filmsPhysical Review B, 1983