Thin-Film Devices on Dielectric Substrates

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Abstract
This paper reviews some of the advantages of making integrated circuits on an insulating substrate, such as sapphire. The properties of thin filmsilicon that are desireable and necessary for making high-performance devices such as carrier mobility, minority carrier lifetime, and doping concentration are discussed. Several illustrative devices of silicon on sapphire are described. Namely: (a) A complementary MOS memory cell with a pair delay of 1.5 nsec and a power consumption of less than 10 μW. This circuit shows several constructions unique to thin films on insulators. (b) An all epitaxial thin-film bipolar transistor with a current gain of 25 and FT of 550 MHz. (c) A 14 000-V integrated rectifier. (d) A visible light emitting plasma with interesting properties. For some device applications single-crystal thin-film semiconductors are not necessary as illustrated by photo-conductor diode arrays of 256×256 elements.

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