Raman scattering from the vibrational modes inTe
- 15 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (2) , 1160-1165
- https://doi.org/10.1103/physrevb.33.1160
Abstract
We report the observation of Raman scattering associated with the vibrational modes in the diluted magnetic semiconductor Te. The low-frequency two-phonon density-of-states features in Te, similar to those of ZnTe, exhibit composition-dependent Raman shifts. Low-frequency disorder-induced one-phonon density-of-states features are also present in the Raman spectra for x≥0.10. The optical phonons of Te exhibit a variation with x that is intermediate between the two-mode and one-mode situations. The optical modes of Te are compared with those of Te, the prototype of wide-band-gap diluted magnetic semiconductors. A random-element isodisplacement model is used to describe the behavior of the optical phonons of both alloy systems.
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