Experimental Evidence for the Validity of Lampert's Theory in the Negative Resistance Region of the GaSe(Sn)
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 34 (2) , 717-720
- https://doi.org/10.1002/pssb.19690340234
Abstract
GaSe(Sn) crystals having negative resistance also show a negative photoconductivity effect at voltages near the threshold value in a wavelength region between 1 and 2.3 μm. This effect is ascribed to a level located in the forbidden gap 0.5 to 0.55 eV above the valence band. This level is identified as that assumed by Lampert for explaining negative resistance in insulators in which double injection occurs.Keywords
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