Low-temperature photoacoustic spectra of n-InSe
- 30 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (36) , L969-L972
- https://doi.org/10.1088/0022-3719/17/36/003
Abstract
Using a ZnO transducer, two peaks at 1.250 and 1.212 eV in the photoacoustic spectra of n-InSe were obtained at 300K. The energy and its temperature variation of the 1.250 eV peak are well explained in terms of a free exciton annihilation. Another peak at 1.212 eV is interpreted by a surface related transition. The results suggest the usefulness of the low-temperature photoacoustic studies on the recombination processes in semiconductors.Keywords
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