Octave-band GaAs f.e.t. y.i.g.-tuned oscillators
- 13 October 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (21) , 629-630
- https://doi.org/10.1049/el:19770450
Abstract
The design of a y.i.g.-tuned f.e.t. oscillator that covers the X-band octave of 6 to 12 GHz is presented. The oscillator uses a compound feedback scheme to generate a negative conductance over the required bandwidth. Excellent agreement is obtained between the computer predictions and the experimental results.Keywords
This publication has 3 references indexed in Scilit:
- X-Band--GaAs FET YIG-tuned OscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- YIG-Tuned GaAs FET OscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Wide-Band Varactor-Tuned GaAs MESFET Oscillators at X- and Ku-BandsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005