Plasma Etching of Si, SiO2, Si3 N 4, and Resist with Fluorine, Chlorine, and Bromine Compounds

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Abstract
The plasma etching of silicon, silicon dioxide, silicon nitride, and positive photoresist are examined using , ,, , , and . Pressure and magnetic field are varied in a factorial manner for all gases and materials in a single‐wafer etch system. Low pressure chemical vapor deposition and plasma‐enhanced chemical vapor deposition nitride etching are compared. Optical emission data were also gathered from this study. Selectivities and applications are discussed.

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