The interpretation of transport results in amorphous silicon
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 357-362
- https://doi.org/10.1016/0022-3093(80)90620-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Interstitial doping of amorphous siliconApplied Physics Letters, 1977
- Temperature variation of the mobility gap in non-polar amorphous semiconductorsJournal of Non-Crystalline Solids, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970