Statistical electron-hole correlation in disordered systems: interband transitions
- 26 June 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (12) , 1335-1344
- https://doi.org/10.1088/0022-3719/5/12/013
Abstract
The dielectric response function is calculated exactly for transitions between a deep flat valence band and a conduction band with Lorentzian distribution of site levels (Lloyd's model). Site energies fluctuate independently of one another whereas the difference between the excited and the ground levels of each site is kept constant. Numerical examples are presented for three model densities of states. The effect of the fluctuations is to smear the edges and introduce small tails if the disorder is small. The absorption tail is much weaker than would be suggested by the tails in the densities of states. Large fluctuations of site energy levels reduce the density of states in the middle of the bands thus increasing the lifetime of the Wannier states, as a result the absorption band becomes narrower with increasing disorder.Keywords
This publication has 6 references indexed in Scilit:
- Optical and electrical energy gaps in amorphous semiconductorsJournal of Non-Crystalline Solids, 1971
- Band-Tail Model for Optical Absorption and for the Mobility Edge in Amorphous SiliconPhysical Review B, 1971
- Review of optical and electrical properties of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Exactly solvable model of electronic states in a three-dimensional disordered Hamiltonian: non-existence of localized statesJournal of Physics C: Solid State Physics, 1969
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Electrons in disordered structuresAdvances in Physics, 1967