High power output, low threshold, inner stripe GaInAsP laser diode on a p-type InP substrate
- 1 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3) , 282-283
- https://doi.org/10.1063/1.95173
Abstract
A V‐grooved, inner stripe laser diode on a p‐type InP substrate emitting at 1.3 μm is reported. The maximum cw output power of 65 mW and the threshold current of 15 mA with fundamental transverse mode operation are performed. The laser has high differential quantum efficiency of 70% at 20 °C and is stably operated at high temperatures; output power >20 mW at 80 °C. The dependence of the threshold current density on the doping impurity level of zinc in the active layer is also discussed.Keywords
This publication has 1 reference indexed in Scilit:
- High power output InGaAsP/InP buried heterostructure lasersElectronics Letters, 1981