Critical Behavior of the Low Temperature Dielectric Constant of Si:As
- 1 January 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (S3-1)
- https://doi.org/10.7567/jjaps.26s3.721
Abstract
Capacitance measurements on insulating uncompensated Si:As have been made to temperatures as low as 10mK from 10Hz to 1MHz. As T→0 C(ω,T) shows very little dispersion from hopping and one obtains the dielectric response ε'(N)-ε h=4πχ'(N). As N→Nc-χ'(N)∝(Nc/N-1)-ζ and we obtain ζ=1.18±.08 for Nc=8.55±.05×1018/cm3, thus finding ζ=2µ where µ is the DC conductivity exponent. These agree with Si:P results and confirm universality of the exponents and the Mott criterion for n=type Si.Keywords
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