The essential elements of strain effects on the electronic structure of lnGa1As-(AlGa)As on GaAs are elucidated. Attention is focused on the optical properties of quantum wells and superlattices(SL) with In fractions <0.12. Photoluminescence and photoluminescence excitation spectroscopy at '-4K has revealed sharp exciton features and allowed us to measure the el-hhl binding energy versus well width, identify Ln =0 and transitions and follow the development of SL minibands. Comparison with envelope function calculations suggests the band offset ratio remains constant (67:33) up to x=O.12.