Computation of Fields in and Around Insulators by Fictitious Point Charges
- 1 February 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electrical Insulation
- Vol. EI-13 (1) , 24-31
- https://doi.org/10.1109/tei.1978.298095
Abstract
The paper describes application of integral approach to the numerical computation of fields in a multi-dielectric, three-dimensional system. The accuracy of the method has been studied by taking a simple example of parallel-plate electrodes containing two-layer dielectrics. The use of fictitious point charges has been found to be quite successful in the analysis of fields in and around a disc insulator. The effect of varying dielectric constant of the insulating material on the field distribution has also been determined.Keywords
This publication has 1 reference indexed in Scilit:
- A Charge Simulation Method for the Calculation of High Voltage FieldsIEEE Transactions on Power Apparatus and Systems, 1974