Comparison between Atmospheric and Reduced Pressure GaAs MOCVD

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Abstract
MOCVD was employed to grow GaAs eritaxial layers at both atmospheric and reduced pressure (76 Torr), while the flow rate and TMG concentration remained the same. Under both growth conditions, an epitaxial layer with a liquid nitrogen electron mobility of 95,000 cm2/V·sec at an electron concentration of 5×1014cm-3 was reproducibly obtained. The growth rate with reduced pressure was larger than with atmospheric pressure. Dependence of the electrical properties upon [AsH3]/[TMG] in the n type region was almost identical for both growth conditions. On the other hand, with reduced pressure growth, the p type region shifted to a higher [AsH3]/[TMG] location, and there was a higher hole concentration than with atmospheric pressure growth. In addition to reporting these observations, this paper will discuss the impurity incorporation mechanism in the p type region.

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