Ultrahigh resolution of calixarene negative resist in electron beam lithography
- 26 February 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (9) , 1297-1299
- https://doi.org/10.1063/1.115958
Abstract
A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes.Keywords
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