Metal-to-semiconductor transition in squashed armchair carbon nanotubes

Preprint

19 January 2003

preprint
Published by arXiv in arXiv

Abstract

We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and Green's function method. We demonstrate a metal-to-semiconductor transistion while squashing the nanotubes and a general mechanism for such transistion. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and interaction between the flattened faces in the squashed nanotubes.

Keywords

ELECTRONIC TRANSPORT PROPERTIES
ARMCHAIR CARBON NANOTUBES
SQUASHED ARMCHAIR CARBON
MOLECULAR DYNAMICS
CARBON NANOTUBES
METAL

All Related Versions

Version 1, 2003-01-19, ArXiv
Version 2, 2003-03-25, ArXiv
Published version: Physical Review Letters, 90 (15), 156601.

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