Effect of thickness on the transverse thermal conductivity of thin dielectric films
- 15 April 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (8) , 3761-3764
- https://doi.org/10.1063/1.356049
Abstract
The transverse thermal conductivities of SiO2 thin films are determined as a function of film thickness. The results indicate that the apparent thermal conductivities of SiO2 thin films are much lower than the thermal conductivity of bulk SiO2. In addition, a slight decrease in the thermal conductivity is observed as the average temperature within the dielectric film increases. The average transverse thermal conductivity decreases drastically as the film thickness is reduced. This strong thickness dependence is explained in terms of an interfacial thermal resistance that develops at the SiO2/Si interface. The experimentally determined value for the interfacial thermal resistance, Rint, is 2.05 mm2 °C W−1.This publication has 6 references indexed in Scilit:
- Microscale Heat Conduction in Dielectric Thin FilmsJournal of Heat Transfer, 1993
- Thermal conductivity of thin SiO2 filmsThin Solid Films, 1992
- Thermal conductivity of dielectric thin filmsJournal of Applied Physics, 1989
- Thermal boundary resistanceReviews of Modern Physics, 1989
- Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°KPhysical Review B, 1968
- Note on the conduction of heat in crystalsPhysica, 1938